Typical Characteristics
VGS
Top
:
15 V
10 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
100
Bottom
:
-1
10
*
Note :
1. 250μ s Pulse Test
2. TC = 25oC
-2
10
-1
10
100
101
VDS , Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
18
15
12
9
VGS = 10V
VGS = 20V
6
3
* Note : TJ = 25oC
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
ID , Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
450
400
350
300
250
200
150
100
50
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
C
VDS = 130V
VDS = 325V
C
VDS = 520V
iss
Coss
6
4
※ Note ;
1. VGS = 0 V
2. f = 1 MHz
C
rss
2
*
Note : ID = 1.8 A
0
0
10
-1
100
101
0
1
2
3
4
5
6
7
8
9
10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,July 2007
SEMIHOW [ SEMIHOW CO.,LTD. ]
