Typical Characteristics
VGS
Top
:
15 V
10 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
101
100
101
100
150 ℃
Bottom
:
25℃
-55 ℃
※ Note
※ Note :
1. VDS = 40V
2. 250μ s Pulse Test
1. 250μ s Pulse Test
2. TC = 25 ℃
-1
10
-1
10
-1
100
101
2
4
6
8
10
10
VGS , Gate-Source Voltage [V]
VDS , Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
101
100
VGS = 10V
VGS = 20V
※ Note :
1. VGS = 0V
2. 250μ s Pulse Test
150 ℃
25℃
※ Note : T = 25 ℃
J
-1
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
5
10
15
20
25
30
ID , Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
8
2400
1800
1200
600
0
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
VDS = 100V
VDS = 250V
C
C
iss
VDS = 400V
Coss
6
4
※ Note ;
1. VGS = 0 V
2. f = 1 MHz
C
rss
2
※ Note : ID = 9.0 A
0
-1
10
100
101
0
5
10
15
20
25
30
35
40
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,June 2005
SEMIHOW [ SEMIHOW CO.,LTD. ]
