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HFP5N65S 参数 Datasheet PDF下载

HFP5N65S图片预览
型号: HFP5N65S
PDF下载: 下载PDF文件 查看货源
内容描述: 650V N沟道MOSFET [650V N-Channel MOSFET]
分类和应用:
文件页数/大小: 8 页 / 890 K
品牌: SEMIHOW [ SEMIHOW CO.,LTD. ]
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Typical Characteristics (continued)  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
1.2  
1.1  
1.0  
*
Note :  
1. VGS = 0 V  
0.9  
0.8  
*
Note :  
1. VGS = 10 V  
2. ID = 250 µA  
2. ID = 2.1 A  
-100  
-50  
0
50  
100  
150  
200  
-100  
-50  
0
50  
100  
150  
200  
TJ, Junction Temperature [oC]  
TJ, Junction Temperature [oC]  
Figure 8. On-Resistance Variation  
vs Temperature  
Figure 7. Breakdown Voltage Variation  
vs Temperature  
5
4
3
2
1
0
Operation in This Area  
is Limited by R DS(on)  
101  
100  
100 µs  
1 ms  
10 ms  
100 ms  
DC  
-1  
10  
* Notes :  
1. TC = 25 o  
C
2. TJ = 150 o  
C
3. Single Pulse  
-2  
10  
100  
101  
102  
103  
25  
50  
75  
100  
125  
150  
TC, Case Temperature [oC]  
VDS, Drain-Source Voltage [V]  
Figure 9. Maximum Safe Operating Area  
Figure 10. Maximum Drain Current  
vs Case Temperature  
100  
D=0.5  
0.2  
* Notes :  
0.1  
1. ZθJC(t) = 1.25 oC/W Max.  
2. Duty Factor, D=t1/t2  
3. TJM - TC = PDM * ZθJC(t)  
-1  
10  
0.05  
0.02  
0.01  
single pulse  
PDM  
-2  
10  
t1  
t2  
100  
101  
-5  
10  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
t1, Square Wave Pulse Duration [sec]  
Figure 11. Transient Thermal Response Curve  
SEMIHOW REV.A0,Oct 2009