Typical Characteristics
VGS, Gate-Source Voltage[V]
VDS, Drain-Source Voltage[V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
12
9
VGS = 10V
6
VGS = 20V
3
* Note : TJ = 25oC
0
0
1
2
3
4
5
ID, Drain Current[A]
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
12
10
8
V
DS = 130V
VDS = 325V
DS = 520V
V
6
4
2
* Note : ID = 1.8A
6
0
0
2
4
8
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage[V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Sep 2009
SEMIHOW [ SEMIHOW CO.,LTD. ]
