Typical Characteristics
VGS, Gate-Source Voltage[V]
VDS, Drain-Source Voltage[V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
ID, Drain Current [A]
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
12
10
8
3000
2500
2000
1500
1000
500
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
C
V
DS = 100V
VDS = 250V
VDS = 400V
C
iss
Coss
6
* Note ;
1. VGS = 0 V
4
C
2. f = 1 MHz
rss
2
∗Note : ID = 13.0A
0
0
10
-1
100
101
0
8
16
24
32
40
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Sep 2009
SEMIHOW [ SEMIHOW CO.,LTD. ]
