Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
12
10
8
2400
1800
1200
600
0
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
VDS = 80V
VDS = 200V
VDS = 320V
C
C
iss
Coss
6
4
※ Note ;
1. VGS = 0 V
2. f = 1 MHz
C
rss
2
※ Note : ID = 11.4 A
0
0
8
16
24
32
40
-1
10
100
101
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Dec 2005
SEMIHOW [ SEMIHOW CO.,LTD. ]
