Typical Characteristics
101
100
150oC
25oC
-55oC
*
Note
1. VDS = 50V
2. 250µs Pulse Test
-1
10
2
4
6
8
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
6
5
4
3
2
1
0
101
VGS = 10V
100
150oC
25oC
VGS = 20V
*
Note :
1. VGS = 0V
Note : TJ = 25oC
8
2. 250µs Pulse Test
*
-1
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
10
VSD , Source-Drain Voltage [V]
ID , Drain Current [A]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
12
10
8
1000
800
600
400
200
0
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
VDS = 120V
VDS = 300V
C
C
iss
VDS = 480V
6
Coss
4
*
Note ;
1. VGS = 0 V
2. f = 1 MHz
C
rss
2
* Note : ID = 4.5A
0
-1
0
2
4
6
8
10
12
10
100
101
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Sep 2009
SEMIHOW [ SEMIHOW CO.,LTD. ]
