Typical Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
101
100
101
150oC
Bottom : 5.5 V
-55oC
25oC
100
※ Notes :
1. 250μ s Pulse Test
2. TC = 25 ℃
※ Notes :
1. VDS = 50V
2. 250μ s Pulse Test
-1
10
-1
10
101
-1
100
2
4
6
8
10
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
3.0
2.5
2.0
1.5
1.0
101
VGS = 10V
VGS = 20V
100
25℃
150 ℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
※ Note : T = 25 ℃
J
-1
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
5
10
15
20
25
30
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
3500
3000
2500
2000
1500
1000
500
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
VDS = 180V
VDS = 450V
C
C
iss
VDS = 720V
6
Coss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
4
2
C
rss
※ Note : ID = 9A
0
0
10
-1
100
101
0
10
20
30
40
50
60
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Apr 2009
SEMIHOW [ SEMIHOW CO.,LTD. ]
