Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
80
70
60
50
40
30
20
10
0
V
GS = 10V
VGS = 20V
* Note : TJ = 25oC
0.0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
ID , Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
8
250
200
150
100
50
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
C
iss
C
VDS = 140V
VDS = 350V
VDS = 560V
6
Coss
4
※ Note ;
1. VGS = 0 V
2. f = 1 MHz
C
rss
2
* Notes : ID = 0.8 A
0
10
0
-1
100
101
0
1
2
3
4
5
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Dec 2008
SEMIHOW [ SEMIHOW CO.,LTD. ]
