2N4898X
2N4899X
2N4900X
MECHANICAL DATA
Dimensions in mm (inches)
3.68
(0.145) rad.
max.
6.35 (0.250)
8.64 (0.340)
3.61 (0.142)
3.86 (0.145)
rad.
PNP EPITAXIAL BASE
MEDIUM POWER
TRANSISTOR
APPLICATIONS
24.33 (0.958)
24.43 (0.962)
0.71 (0.028)
0.86 (0.034)
14.48 (0.570)
14.99 (0.590)
4.83 (0.190)
5.33 (0.210)
9.14 (0.360)
min.
1.27 (0.050)
1.91 (0.750)
TO–66 Metal Package.
ABSOLUTE MAXIMUM RATINGS
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C
I
B
P
D
T
C
T
stg
R
θJC
Semelab plc.
(T
case
= 25°C unless otherwise stated)
2N4898X 2N4899X 2N4900X
Collector – Base Breakdown Voltage
–40V
–60V
–80V
Collector – Emitter Breakdown Voltage
–40V
–60V
–80V
Emitter – Base Breakdown Voltage
–5V
Continuous Collector Current
–4A
Base Current
–1A
Total Power Dissipation
25W
Operating Case Temperature Range
Storage Temperature Range
Thermal Resistance , Junction To Case
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
11.94 (0.470)
12.70 (0.500)
Medium power, low frequency PNP
bipolar transistor in a hermetically
sealed TO–66 metal package.
–65 to +200°C
–65 to +200°C
7.0°C/W
Prelim. 9/96