SILICON PLANAR EPITAXIAL
PNP TRANSISTOR
2N3799X
DYNAMIC CHARACTERISTICS
I
= -500µA
V
V
= -5V
= -5V
C
CE
CE
30
f = 20MHz
= -1.0mA
f
Transition Frequency
MHz
T
I
C
100
500
4
f = 100MHz
= -5V
V
I = 0
E
CB
f = 1.0MHz
= -0.5V
C
Output Capacitance
Input Capacitance
obo
ibo
pF
V
I = 0
C
EB
f = 1.0MHz
C
h
8
Input Impedance
10
5
40
60
KΩ
ie
h
h
h
I
= -1.0mA
V
= -10V
Output Admittance
Voltage Feedback Ratio
Small Signal Current Gain
µhmos
oe
re
fe
C
CE
-4
f = 1.0MHz
25
x 10
300
900
f=100Hz
BW=20Hz
f=1.0KHz
BW=200Hz
f=10KHz
2.5
0.8
4
V
I
= -10V
CE
Spot:
1.5
N
= -100µA
= 3KΩ
Noise Figure
dB
F
C
R
G
Noise:
1.8
1.5
1.5
2.5
BW=2KHz
f=1.0KHz
MECHANICAL DATA
Dimensions in mm (inches)
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
0.48 (0.019)
0.41 (0.016)
dia.
2.54 (0.100)
Nom.
TO-18 (TO-206AA) METAL PACKAGE
Underside View
Pin 1 - Emitter
Pin 2 - Base
Pin 3 - Collector
3
1
2
Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 8240
Issue 1
Page 3 of 3
Website: http://www.semelab-tt.com