SILICON RF SMALL SIGNAL
NPN TRANSISTOR
2N2857CSM
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
A
Symbols
Parameters
Test Conditions
Min. Typ
Max. Units
(1)
Collector-Emitter
Breakdown Voltage
V
I
= 3mA
= 15V
I = 0
B
15
V
(BR)CEO
C
V
I = 0
E
10
1.0
1.0
100
10
nA
µA
CB
I
T
= 150°C
Collector-Cut-Off Current
CBO
A
V
V
V
I
= 30V
= 16V
= 3V
I = 0
E
CB
CE
EB
I
I = 0
B
Collector-Cut-Off Current
Emitter-Cut-Off Current
nA
µA
CES
I
I = 0
C
EBO
= 3mA
V
T
= 1.0V
30
10
150
C
CE
= -55°C
(1)
Forward-current transfer
ratio
h
FE
A
(1)
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
V
I
I
= 10mA
= 10mA
I = 1.0mA
B
0.4
1.0
CE(sat)
C
C
V
(1)
V
I = 1.0mA
B
BE(sat)
DYNAMIC CHARACTERISTICS
I
= 5mA
V
V
= 6V
= 6V
C
CE
CE
Small signal forward-current
transfer ratio
| h
|
10
50
21
220
1.0
15
fe
f = 100MHz
= 2mA
I
C
h
Small Signal Current Gain
fe
f = 1.0KHz
= 10V
V
I = 0
E
CB
Collector – Base Feedback
Capacitance
C
pF
ps
cb
f = 1.0MHz
I = 2mA
E
V
= 6V
CB
(2)
Collector Base Time
Constant
r ’C
b
4
C
f = 31.9MHz
V
= 6V
I
= 1.5mA
CE
f = 450MHz
= 6V
C
(2)
G
Small Signal Power Gain
Noise Figure
12.5
pe
dB
V
I
= 1.5mA
C
CE
f = 450MHz
NF (2)
4.5
R
= 50Ω
G
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
(2) By design only, not a production test.
Semelab Limited
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Document Number 3339
Issue 5
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