LAB
NPN SILICON
AMPLIFIER TRANSISTOR
MECHANICAL DATA
Dimensions in mm (inches)
SEME
2N2484
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
FEATURES
• SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
0.48 (0.019)
0.41 (0.016)
dia.
2.54 (0.100)
Nom.
3
2
1
TO18
PIN 1 = Emitter
PIN 2 = Base
12.7 (0.500)
min.
5.33 (0.210)
4.32 (0.170)
PIN 3 = Collector
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
C
P
D
P
D
T
STG
, T
J
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Collector Current Continuous
Total Device Dissipation
Total Device Dissipation
@ T
A
=25°C
Derate above 25°C
@ T
C
=25°C
Derate above 25°C
Operating and Storage Temperature Range
60V
60V
6V
50mA
360mW
2.06mW / °C
1.2W
6.85mW / °C
–65 to +200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
Document. 2359
Issue 1