E0C6S32
E0C6SL32 (Crystal oscillation circuit)
(Unless otherwise specified: VDD=0V, VSS=-1.5V, Crystal: C-002R (CI=35kΩ), CG=25pF, CD=built-in, Ta=25°C)
Characteristic
Oscillation start voltage
Oscillation stop voltage
Built-in capacitance (drain)
Frequency/voltage deviation
Frequency/IC deviation
Frequency adjustment range
Symbol
Vsta
Vstp
CD
∂f/∂V
∂f/∂IC
Condition
Min.
-1.1
Typ.
Max.
Unit
V
V
tsta≤5sec
(VSS)
tstp≤10sec
(VSS) -1.1(-0.9)*1
Including the parasitic capacity inside the IC
VSS=-1.1 to -1.8V (-0.9) *1
20
pF
5
10
ppm
ppm
ppm
V
-10
∂f/∂CG CG=5 to 25pF
35
(VSS)
45
Harmonic oscillation start voltage Vhho
Permitted leak resistance
-1.8
Rleak
Between OSC1 and VDD, VSS
200
MΩ
1: Items enclosed in parentheses ( ) are those used when operating at heavy load protection mode.
Note, however, that the ON time for BLS must be limited to 10 msec per second of operation time.
E0C6SB32 (Crystal oscillation circuit)
(Unless otherwise specified: VDD=0V, VSS=-1.5V, Crystal: C-002R (CI=35kΩ), CG=25pF, CD=built-in, Ta=25°C)
Characteristic
Oscillation start voltage
Oscillation stop voltage
Built-in capacitance (drain)
Frequency/voltage deviation
Frequency/IC deviation
Frequency adjustment range
Symbol
Vsta
Vstp
CD
∂f/∂V
∂f/∂IC
Condition
Min.
-1.1
Typ.
Max.
Unit
V
V
tsta≤5sec
(VSS)
tstp≤10sec
(VSS) -1.1(-0.9)*1
Including the parasitic capacity inside the IC
VSS=-1.1 to -3.6V (-0.9) *1
20
pF
5
10
ppm
ppm
ppm
V
-10
∂f/∂CG CG=5 to 25pF
35
(VSS)
45
Harmonic oscillation start voltage Vhho
Permitted leak resistance
-3.6
Rleak
Between OSC1 and VDD, VSS
200
MΩ
1: Items enclosed in parentheses ( ) are those used when operating at heavy load protection mode.
Note, however, that the ON time for BLS must be limited to 10 msec per second of operation time.
E0C6SA32 (Crystal oscillation circuit)
(Unless otherwise specified: VDD=0V, VSS=-3.0V, Crystal: C-002R (C
I
=35kΩ), C
G
=25pF, CD=built-in, Ta=25°C)
Characteristic
Oscillation start voltage
Oscillation stop voltage
Built-in capacitance (drain)
Frequency/voltage deviation
Frequency/IC deviation
Frequency adjustment range
Harmonic oscillation start voltage
Permitted leak resistance
Symbol
Vsta
Vstp
Condition
Min.
-1.8
-1.8
Typ.
Max.
Unit
V
V
t
t
sta≤5sec
stp≤10sec
(VSS
(VSS
)
)
C
D
Including the parasitic capacity inside the IC
20
45
pF
∂f/∂V
∂f/∂IC
V
SS=-2.2 to -3.6V
=5 to 25pF
Between OSC1 and VDD, VSS
5
10
ppm
ppm
ppm
V
-10
35
∂f/∂CG
CG
V
hho
(VSS
)
-3.6
Rleak
200
MΩ
E0C6SA32 (CR oscillation circuit)
(Unless otherwise specified: VDD=0V, VSS=-3.0V, RCR=33kΩ, Ta=25°C)
Characteristic
Oscillation frequency dispersion
Oscillation start voltage
Oscillation start time
Symbol
Condition
Min.
-30
-1.8
Typ.
1MHz
Max.
30
Unit
%
V
mS
V
f
OSC3
Vsta
sta
Vstp
(VSS
(VSS
)
)
t
V
SS=-2.2 to -3.6V
3
Oscillation stop voltage
-1.8
E0C6SA32 (Ceramic oscillation circuit)
(Unless otherwise specified: VDD=0V, VSS=-3.0V, ceramic oscillation: 1MHz, CGC=CDC=100pF, Ta=25°C)
Characteristic
Oscillation start voltage
Oscillation start time
Symbol
Vsta
tsta
Vstp
Condition
Min.
-1.8
Typ.
Max.
Unit
V
mS
V
(VSS)
(VSS)
VSS=-2.2 to -3.6V
5
Oscillation stop voltage
-1.8
9
SEIKO [ SEIKO EPSON CORPORATION ]
