E0C63B08
● Oscillation Characteristics
The oscillation characteristics change depending on the conditions (components used, board pattern, etc.). Use the follow-
ing characteristics as reference values.
OSC1 crystal oscillation circuit
(Unless otherwise specified: VDD=3.0V, VSS=0V, fOSC1=32.768kHz, CG=25pF, CD=built-in, Ta=25°C)
Characteristic
Oscillation start voltage
Oscillation stop voltage
Symbol
Vsta
Vstp
Condition
Min.
1.1
1.1
0.9
Typ.
14
Max.
Unit
V
V
V
pF
ppm
ppm
ppm
ppm
ppm
ppm
V
tsta≤3sec (VDD)
tstp≤10sec
(VDD)
Normal mode
Doubler mode
Including the parasitic capacity inside the IC (in chip)
Built-in capacitance (drain)
Frequency/voltage deviation
CD
∂f/∂V
VDD=0.9 to 3.6V
with VDC switching
without VDC switching
10
5
10
Frequency/IC deviation
Frequency adjustment range
∂f/∂IC
∂f/∂CG CG=5 to 25pF
-10
30
20
8
3.6
200
32.768kHz
76.8kHz
153.6kHz
40
25
10
Harmonic oscillation start voltage Vhho
Permitted leak resistance
CG=5pF (VDD)
Between OSC1 and VDD, VSS
Rleak
MΩ
OSC3 CR oscillation circuit
(Unless otherwise specified: VDD=3.0V, VSS=0V, RCR=120kΩ, Ta=25°C)
Characteristic
Oscillation frequency dispersion
Oscillation start voltage
Symbol
fOSC3
Vsta Normal mode
Doubler mode
Condition
Min.
-30
2.2
0.9
Typ.
310kHz
Max.
30
Unit
%
V
(VDD)
(VDD)
V
Oscillation start time
Oscillation stop voltage
tsta
VDD=2.2 to 3.6V (Doubler mode: VDD=0.9 to 2.2V
)
3
mS
V
V
Vstp Normal mode
Doubler mode
(VDD)
(VDD)
2.2
0.9
6
SEIKO [ SEIKO EPSON CORPORATION ]
