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SS559ESOT 参数 Datasheet PDF下载

SS559ESOT图片预览
型号: SS559ESOT
PDF下载: 下载PDF文件 查看货源
内容描述: 霍尔闩锁器 - 高灵敏度 [Hall Latch - High Sensitivity]
分类和应用:
文件页数/大小: 8 页 / 272 K
品牌: SECELECTRONICS [ SEC Electronics Inc. ]
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SS559  
Hall Latch - High Sensitivity  
Magnetic Specifications  
DC Operating Parameters VDD = 2.5V to 24V (unless otherwise specified)  
SS559  
Parameter  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Units  
Operating Point  
Release Point  
Hysteresis  
BOP  
15  
30  
-30  
60  
45  
G
G
G
G
G
G
G
G
G
BRP  
E spec., TA = 85°C  
-45  
-15  
BHYST  
BOP  
Operating Point  
Release Point  
Hysteresis  
15  
30  
50  
BRP  
K spec., TA = 125°C  
L spec., TA = 150°C  
-50  
-30  
60  
-15  
BHYST  
BOP  
Operating Point  
Release Point  
Hysteresis  
10  
30  
55  
BRP  
-55  
-30  
60  
-10  
BHYST  
Table 4: Magnetic Specifications  
Detailed General Description  
The SS559 exhibits latch magnetic switching characteristics. Therefore, it requires both south and north poles to  
operate properly.  
The OUT pin of these devices switches low (turns on) when a magnetic field perpendicular to the Hall sensor exceeds  
the operate point threshold, BOP. After turn-on, the output voltage is VDSon. Note that the device latches, that is, a south  
pole of sufficient strength towards the branded surface of the device turns the device on. The device remains on if the  
south pole is removed (B0). This latching property defines the device as a magnetic memory.  
When the magnetic field is reduced below the release point, BRP, the OUT pin turns off (goes high). The difference in  
the magnetic operating and release points is the hysteresis, BHYST, of the device. This built-in hysteresis prevents  
output oscillation near the switching point, and allows clean switching of the output even in the presence of external  
mechanical vibration and electrical noise.  
The device behaves as a latch with symmetric operating and release switching points (BOP=|BRP|). This means  
magnetic fields with equivalent strength and opposite direction drive the output high and low.  
Powering-on the device in the hysteresis region (less than BOP and higher than BRP) allows an indeterminate output  
state. The correct state is attained after the first excursion beyond BOP or BRP.  
The SOT-23 device is reversed from the UA package. The SOT-23 output transistor will be latched on in the presence  
of a sufficiently strong North pole magnetic field applied to the marked face.  
Output level  
Output level  
OUT = High  
OUT = High  
BHYS  
BHYS  
OUT = Low  
OUT = Low  
BRP  
-30Gs typ  
BOP  
30Gs typ  
BRP  
-30Gs typ  
BOP  
30Gs typ  
0mT  
0mT  
Flux density  
Flux density  
UA package - Latch characteristic  
SE package - Latch characteristic  
4
V2.10 May 1, 2012