SS1101-A
Unipolar Hall Switch-Low Sensitivity
General Electrical Specifications
DC Operating Parameters TA = 25°C, VDD= 3.3V to 24V (unless otherwise specified)
Typ
Parameter
Symbol
Test Conditions
ng
Min
3.3
Max
24
Units
VDD
S
upp
l
l
y
y
V
o
l
t
a
g
e
O
pe
r
a
ti
V
1.5
2.5
0.4
I
Supp
C
u
rr
e
n
t
B < BRP
5
m
A
DD
VD
IOUT = 20mA, B >
Output
Output
S
a
t
u
r
a
ti
on
Vo
lta
ge
0.5
10
V
BOP
S
on
I
t
t
B <
VOUT
=
24
V
Leakage Current
BRP
0.01
0.25
0.25
µA
OFF
Output R
Output
ise Time
r
R
L
= 1kΩ, C
=1kΩ, C =
L
=
20pF
20pF
µ
s
s
L
F
a
ll
T
im
e
f
R
L
µ
Magnetic Specifications
DC Operating Parameters V
= 3.3V to 24V (unless otherwise specified)
DD
Test Conditions
Typ
Parameter
Symbol
BOP
Min
45
Max
110
95
Units
80
50
30
O
pe
r
a
ti
ng
P
o
i
n
t
G
G
G
Ta=25°C,Vdd=12V DC
R
e
lea
se
Po
in
t
BRP
10
BH
Hysteresis
Y
S
Application Information
Typical Three-Wire Application Circuit
Application Comments
For proper operation, a 100nF bypass capacitor should be placed as close as possible to the device between the VDD and ground pin.
For reverse voltage protection, it is recommended to connect a resistor or a diode in series with the VDD pin.
When using a resistor, three points are important:
- the resistor has to limit the reverse current to 50mA maximum (VCC / R1 ≈50mA)
- the resulting device supply voltage VDD has to be higher than VDD min (VDD = VCC – R1.IDD
)
- the resistor has to withstand the power dissipated in reverse voltage condition (PD = VCC2/ R1)
When using a diode, a reverse current cannot flow and the voltage drop is almost constant (≈0.7V).
Therefore, a 100Ω/0.25W resistor for 5V application and a diode for higher supply voltage are recommended.
Both solutions provide the required reverse voltage protection.
4
V1.00 Nov 26, 2012
SECELECTRONICS [ SEC Electronics Inc. ]
