SICF3SV2
Current Sensors
General Description
For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between
the primary circuit (high power) and the secondary circuit (electronic circuit)
Parameters Table
PARAMETERS
SYMBOL
UNIT
VALUE
CONDITIONS
Electrical data
Supply voltage(±5%)
Current consumption
VC
IC
V
±15
22+Is
50
mA
IPN=100A
IPN=200A
IPN=300A
Secondary nominal r.m.s. current
ISN
mA
100
150
Conversion ratio
KN
Vd
1:2000
6
R. m. s voltage for AC isolation test
KV
@50Hz, 1 min
Accuracy - Dynamic performance data
Linearity
εL
XG
IO
%
%
<±0.1
<±0.5
<±0.2
±0.6
Accuracy
@ IPN , TA = 25°C
Offset current
Thermal drift of Io
Response time
mA
mA
µS
@ IP = 0,TA = 25°C
@ IP = 0,-10～+70°C
IOT
tr
<1
@ 90% of IPN step
@-3dB
di/dt accurately followed
Frequency bandwidth (1)
di/dt
BW
A/µS
kHz
>100
DC~100
General data
Ambient operating temperature
Ambient storage temperature
Secondary coil resistance
TA
TS
Rs
℃
℃
Ω
-40 ~ +85
-40 ~ +105
28
@ TA = 70°C
Notes:
1) Please refer to derating curves in the technical file to avoid excessive core heating at high
frequency.
2
V2.00 May 1, 2012
SECELECTRONICS [ SEC Electronics Inc. ]
