SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB891F
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
ICBO
PARAMETER
CONDITIONS
MIN
-32
-40
-5
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=-1mA ;IB=0
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
IC=-50µA ;IE=0
V
IE=-50µA ;IC=0
V
IC=-2.0A; IB=-0.2A
VCB=-20V; IE=0
-0.5
-0.8
-1.0
-1.0
390
V
µA
µA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
hFE
DC current gain
IC=-0.5A ; VCE=-3V
IC=-0.5A ; VCE=-5V;f=30MHz
IE=0; f=1MHz ; VCB=-10V
82
fT
Transition frequency
100
50
MHz
pF
COB
Collector output capacitance
ꢀ hFE-2 Classifications
P
Q
R
82-180
120-270 180-390
2
SAVANTIC [ Savantic, Inc. ]
