SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB776
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
VBE
PARAMETER
CONDITIONS
MIN
-100
-120
-6
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=-50mA ;RBE=∞
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
IC=-5mA ;IE=0
V
IE=-5mA ;IC=0
V
IC=-4A ;IB=-0.4A
IC=-1A;VCE=-5V
VCB=-80V IE=0
VEB=-4V; IC=0
-0.9
-2.0
-1.5
-0.1
-0.1
200
V
V
ICBO
mA
mA
IEBO
hFE-1
DC current gain
IC=-1A ; VCE=-5V
IC=-4A ; VCE=-5V
IC=-1A ; VCE=-5V
f=1MHz;VCB=10V
60
20
hFE-2
DC current gain
fT
Transition frequency
15
MHz
pF
COB
Collector output capacitance
200
Switching times
ton
tstg
tf
Turn-on time
0.2
1.2
0.3
µs
µs
µs
IC=-1.0A; IB1=-IB2=-0.1A
RL=20Ω;VCC=20V
Storage time
Fall time
ꢀ hFE-1 Classifications
D
E
60-120
100-200
2
SAVANTIC [ Savantic, Inc. ]
