SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB536
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=-10mA; IB=0
-120
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=-1A; IB=-0.1A
-2.0
-1.5
-1.0
-1.0
V
IC=-1A; IB=-0.1A
V
VCB=-120V; IE=0
VEB=-3V; IC=0
µA
µA
IEBO
hFE-1
IC=-5mA ; VCE=-5V
IC=-0.3A ; VCE=-5V
IE=0 ; VCB=-10V; f=1MHz
IC=-0.1A ; VCE=-5V
25
40
hFE-2
DC current gain
250
COB
Output capacitance
35
40
pF
fT
Transition frequency
MHz
ꢀ hFE-2 Classifications
N
M
L
K
40-80
60-120
80-160
120-250
2
SAVANTIC [ Savantic, Inc. ]
