SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB514
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO
VCEsat
VBE
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter voltage
IC=-10mA; IB=0
-50
Collector-emitter saturation voltage IC=-2A; IB=-0.2A
-1.0
-1.5
-0.1
-1.0
320
V
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=-1A ; VCE=-5V
VCB=-20V; IE=0
V
ICBO
mA
mA
IEBO
VEB=-4V; IC=0
hFE-1
hFE-2
fT
IC=-1A ; VCE=-2V
IC=-0.1A ; VCE=-2V
IC=-0.5A ; VCE=-5V
40
35
DC current gain
Transition frequency
8
MHz
ꢀ hFE-1Classifications
C
D
E
F
40-80
60-120
100-200 160-320
2