SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1530
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)EBO
VCEsat
VBE
PARAMETER
CONDITIONS
MIN
-150
-6
TYP. MAX UNIT
Collector-emitter breakdown voltage IC=-50mA , RBE=∞
V
V
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
DC current gain
IE=-5mA , IC=0
IC=-500mA ;IB=-50mA
IC=-50mA ; VCE=-4V
VCB=-120V ;IE=0
-3.0
-1.0
-1
V
V
ICBO
µA
hFE-1
IC=-50mA ; VCE=-4V
IC=-500mA ; VCE=-10V
60
60
200
hFE-2
DC current gain
ꢀ hFE-1 Classifications
B
C
60-120
100-200
2
SAVANTIC [ Savantic, Inc. ]
