SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1393 2SB1393A
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
-60
-80
TYP.
MAX
UNIT
2SB1393
Collector-emitter
breakdown voltage
V(BR)CEO
IC=-30mA , IB=0
V
2SB1393A
VCEsat
VBE
Collector-emitter saturation voltage
Base-emitter voltage
IC=-3A; IB=-0.375A
VCE=-4V; IC=-3A
VCE=-60V ;VBE=0
VCE=-80V; VBE=0
VCE=-30V; IB=0
-1.2
-1.8
V
V
2SB1393
Collector
ICES
-200
-300
µA
cut-off current
2SB1393A
2SB1393
Collector
ICEO
µA
cut-off current
2SB1393A
VCE=-60V; IB=0
IEBO
hFE-1
hFE-2
fT
Emitter cut-off current
DC current gain
VEB=-5V; IC=0
-1.0
250
mA
IC=-1A ; VCE=-4V
IC=-3A ; VCE=-4V
IC=-0.1A; VCE=-5V;f=1MHz
70
10
DC current gain
Transition frequency
20
MHz
Switching times
Turn-on time
0.5
1.2
0.3
µs
µs
µs
ton
ts
IC=-1A ;IB1=-0.1A
IB2=0.1A;VCC=-50V
Storage time
Fall time
tf
ꢀ hFE-1 Classifications
Q
P
70-150
120-250
2