SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1289
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
-80
-80
-5
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=-1mA; IB=0
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
IC=-50µA; IE=0
V
IE=-50µA; IC=0
V
IC=-4A; IB=-0.4A
IC=-4A; IB=-0.4A
VCB=-80V; IE=0
-1.0
-1.5
-10
V
V
µA
µA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-10
hFE
DC current gain
IC=-1A ; VCE=-5V
IE=0 ; VCB=-10V; f=1MHz
IC=-0.5A ; VCE=-5V
100
320
COB
Output capacitance
200
12
pF
fT
Transition frequency
MHz
ꢀ hFE Classifications
E
F
100-200
160-320
2
SAVANTIC [ Savantic, Inc. ]
