SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1151
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
-0.3
-1.2
-10
UNIT
V
Collector-emitter saturation voltage IC=-2.0A ;IB=-0.2A
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=-2.0A ;IB=-0.2A
VCB=-50V; IE=0
VEB=-7V; IC=0
V
µA
µA
IEBO
-10
hFE-1
IC=-0.1A ; VCE=-1V
IC=-2A ; VCE=-1V
IC=-5A ; VCE=-2V
60
100
50
hFE-2
DC current gain
400
hFE-3
DC current gain
Switching times
ton
tstg
tf
Turn-on time
0.15
0.78
0.18
1.0
2.5
1.0
µs
µs
µs
IC=-2A; IB1=-IB2=-0.2A
RL=5.0Ω;VCC≈10V
Storage time
Fall time
ꢀ hFE-2 Classifications
M
L
K
100-200 160-320 200-400
2
SAVANTIC [ Savantic, Inc. ]
