SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1016
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBE
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=-50mA; IB=0
-100
Collector-emitter saturation voltage
Base-emitter voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=-4A ;IB=-0.4A
IC=-4A; VCE=-5V
VCB=-100V; IE=0
VEB=-5V; IC=0
-2.0
-1.5
-100
-1
V
V
ICBO
µA
mA
IEBO
hFE-1
hFE-2
fT
IC=-1A ; VCE=-5V
IC=-4A ; VCE=-5V
IC=-1A; VCE=-5V
f=1MHz ; VCB=-10V;IE=0
40
20
240
DC current gain
Transition frequency
5
MHz
pF
COB
Collector output capacitance
270
ꢀ hFE-1 Classifications
R
O
Y
40-80
70-140
120-240
2
SAVANTIC [ Savantic, Inc. ]
