SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA753
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
VBE
PARAMETER
CONDITIONS
MIN
-110
-140
-5
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=-50mA ;RBE=∞
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
DC current gain
IC=-5mA ;IE=0
V
IE=-5mA ;IC=0
V
IC=-5A; IB=-1A
IC=-1A ; VCE=-5V
VCB=-30V; IE=0
IC=-1A ; VCE=-5V
IC=-10A ; VCE=-5V
IC=-1A ; VCE=-5V
-1.5
-1.5
-1
V
V
ICBO
mA
hFE-1
30
15
200
hFE-2
DC current gain
fT
Transition frequency
20
MHz
ꢀ hFE-1 Classifications
A
B
C
30-60
50-120
100-200
2
SAVANTIC [ Savantic, Inc. ]
