SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1860
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=-25mA; IB=0
-150
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=-5 A;IB=-0.5 A
VCB=-150V; IE=0
VEB=-5V; IC=0
-2.0
-100
-100
180
V
µA
µA
IEBO
hFE
IC=-5A ; VCE=-4V
IC=-2A ; VCE=-12V
IE=0; VCB=-10V;f=1MHz
50
fT
Transition frequency
50
MHz
pF
COB
Output capacitance
400
Switching times
ton
Turn-on time
0.25
0.85
0.20
µs
µs
µs
IC=-5A;RL=12Ω
IB1=-IB2=-0.5A
VCC=-60V
ts
Storage time
Fall time
tf
ꢀ hFE classifications
O
P
Y
50-100
70-140
90-180
2
SAVANTIC [ Savantic, Inc. ]
