SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1169
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
-200
-200
-6
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=-25mA ; IB=0
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
IC=-1mA ; IE=0
IE=-1mA ; IC=0
IC=-5A ;IB=-0.5A
IC=-5A ;IB=-0.5A
VCB=-200V; IE=0
VEB=-6V; IC=0
V
V
-2.0
-2.5
-10
-10
V
V
µA
µA
IEBO
Emitter cut-off current
hFE
DC current gain
IC=-5A ; VCE=-4V
IC=-1A ; VCE=-10V
50
fT
Transition frequency
20
MHz
2