SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1108
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)EBO
VCEsat
VBE
PARAMETER
CONDITIONS
MIN
-130
-5
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=-25mA ; IB=0
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IE=-1mA ; IC=0
V
IC=-5A ;IB=-0.5A
IC=-5A ; VCE=-5V
VCB=-130V; IE=0
VEB=-5V; IC=0
-2.0
-2.0
-5
V
V
ICBO
µA
µA
IEBO
-5
hFE-1
IC=-2A ; VCE=-5V
IC=-5A ; VCE=-5V
IC=-1A ; VCE=-10V
55
35
160
hFE-2
DC current gain
fT
Transition frequency
60
MHz
2
SAVANTIC [ Savantic, Inc. ]
