SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1069 2SA1069A
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
-60
-80
TYP.
MAX
UNIT
2SA1069
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=-3.0A ,IB=-0.3A;L=1mH
V
2SA1069A
VCEsat
Collector-emitter saturation voltage IC=-3A; IB=-0.3A
-0.6
-1.5
V
V
VBEsat
Base-emitter saturation voltage
IC=-3A; IB=-0.3A
VCB=-60V; IE=0
VCB=-80V; IE=0
VEB=-5V; IC=0
2SA1069
Collector
ICBO
-10
-10
µA
µA
cut-off current
2SA1069A
IEBO
hFE-1
hFE-2
Emitter cut-off current
DC current gain
IC=-0.3A ; VCE=-5V
IC=-3A ; VCE=-5V
40
40
DC current gain
200
Switching times
ton
tstg
tf
Turn-on time
0.5
2.5
0.5
µs
µs
µs
IC=-3A ; VCC=-50V
IB1=-IB2=-0.3A;RL=17Ω
Storage time
Fall time
ꢀ hFE-2 Classifications
M
L
K
40-80
60-120
100-200
2