SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1041
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
-120
-120
-7
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=-10mA ;IB=0
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
IC=-0.1mA ;IE=0
V
IE=-0.1mA ;IC=0
V
IC=-7A; IB=-0.7A
IC=-7A; IB=-0.7A
VCB=-120V; IE=0
VEB=-7V; IC=0
-1.5
-1.8
-50
V
V
µA
µA
IEBO
Emitter cut-off current
-50
hFE
DC current gain
IC=-1.5A ; VCE=-5V
IE=0 ; VCB=-10V;f=1.0MHz
IC=-1A ; VCE=-10V
35
200
COB
Output capacitance
350
60
pF
fT
Transition frequency
MHz
2