SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6077 2N6078 2N6079
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
275
250
350
TYP.
MAX
UNIT
2N6077
2N6078
2N6079
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=0.1A ;IB=0
V
VCEsat
VBEsat
ICEO
ICEX
ICBO
IEBO
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Collector cut-off current
Emitter cut-off current
IC=5A; IB=0.5A
1.0
1.2
2.0
V
IC=5A; IB=0.5A
V
VCE= Rated VCEO; IB=0
mA
mA
mA
mA
VCE=Rated VCEO; VBE(off)=1.5V
TC=125ꢀ
0.1
1.0
VCB=Rated VCBO; IE=0
VEB=6V; IC=0
0.1
1.0
70
DC current gain
IC=1.2A ; VCE=1V
12
fT
Transition frequency
IC=0.5A;VCE=10V;f=1MHz
7
MHz
2