SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6037 2N6038 2N6039
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
40
TYP.
MAX
UNIT
2N6037
2N6038
2N6039
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=0.1A ;IB=0
V
60
80
VCEsat-1
VCEsat-2
VBEsat
VBE
Collector-emitter saturation voltage IC=2A; IB=8mA
Collector-emitter saturation voltage IC=4A; IB=40mA
2.0
3.0
4.0
2.8
0.1
V
V
Base-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
IC=4A; IB=40mA
V
IC=2A ; VCE=3V
V
ICEO
VCE=Rated VCEO; IB=0
mA
mA
mA
mA
VCE=Rated VCEO; VBE(off)=1.5V
TC=125ꢀ
0.1
0.5
ICEX
ICBO
VCB=Rated VCBO; IE=0
VEB=5V; IC=0
0.1
2.0
IEBO
hFE-1
hFE-2
hFE-3
COB
IC=0.5A ; VCE=3V
IC=2A ; VCE=3V
500
750
100
DC current gain
15000
100
DC current gain
IC=4A ; VCE=3V
Output capacitance
IE=0;VCB=10V;f=0.1MHz
pF
2
SAVANTIC [ Savantic, Inc. ]
