SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2N5737 2N5738
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
-60
TYP.
MAX
UNIT
2N5737
2N5738
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=-0.2A ;IB=0
V
-100
VCEsat-1
VCEsat-2
VBEsat
VBE
Collector-emitter saturation voltage IC=-5A; IB=-0.5A
Collector-emitter saturation voltage IC=-10A ;IB=-2.5A
-1.0
-3.0
-2.5
-1.5
-0.1
V
V
Base-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
IC=-10A ;IB=-2.5A
IC=-4A ; VCE=-4V
V
V
ICBO
VCB=Rated VCBO; IE=0
mA
mA
mA
VCE= Rated VCEO; VBE(off)=-1.5V
TC=150ꢀ
-0.5
-5.0
ICEX
IEBO
VEB=-5V; IC=0
-1.0
80
hFE-1
hFE-2
fT
IC=-5A ; VCE=-5V
IC=-10A ; VCE=-5V
IC=-0.5A ; VCE=-10V
20
4
DC current gain
Transition frequency
10
MHz
2