SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5631
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat-1
VCEsat-2
VBEsat
VBE
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Collector cut-off current
Emitter cut-off current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=0.2A ;IB=0
140
IC=10A; IB=1A
IC=16A ;IB=4A
1.0
2.0
1.8
1.5
2.0
2.0
V
V
IC=10A; IB=1A
IC=8A ; VCE=2V
VCB=ratedVCBO; IE=0
VCE=70V; IB=0
V
V
ICBO
mA
mA
mA
mA
ICEO
V
CE=ratedVCB ;VBE(off)=1.5V
TC=150ꢀ
2.0
7.0
ICEX
IEBO
VEB=7V; IC=0
5.0
60
hFE-1
DC current gain
IC=8A ; VCE=2V
15
4
hFE-2
DC current gain
IC=16A ; VCE=2V
COB
Output capacitance
IE=0 ; VCB=10V ;f=0.1MHz
IC=1A ; VCE=20V ;f=0.5MHz
500
pF
fT
Transition frequency
1.0
MHz
2
SAVANTIC [ Savantic, Inc. ]
