SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors 2N5490 2N5492 2N5494 2N5496
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
2N5490/5494
CONDITIONS
MIN
40
TYP.
MAX UNIT
Collector-emitter
sustioning voltage
VCEO(SUS)
IC=0.1A ;IB=0
V
2N5492
2N5496
2N5490
2N5492
2N5494
2N5496
2N5490
2N5492
2N5494
2N5496
2N5492
2N5490/5494
2N5496
55
70
IC=2.0A;IB=0.2A
IC=2.5A;IB=0.25A
IC=3.0A;IB=0.3A
Collector-emitter
saturation voltage
VCEsat
1.0
V
IC=3.5A;IB=0.35A
IC=2.0A ; VCE=4V
IC=2.5A ; VCE=4V
IC=3.0A ; VCE=4V
IC=3.5A ; VCE=4V
VCE=70V;VBE=1.5V
VCE=55V;VBE=1.5V
VCE=85V;VBE=1.5V
VCE=Rated VCEO;RBE=100Ω
VEB=5V; IC=0
1.1
1.3
1.5
1.7
VBE
Base-emitter on voltage
Collector cut-off current
V
ICEV
1.0
mA
ICER
IEBO
Collector cut-off current
Emitter cut-off current
0.5
1.0
mA
mA
2N5490
2N5492
2N5494
2N5496
IC=2.0A ; VCE=4V
IC=2.5A ; VCE=4V
IC=3.0A ; VCE=4V
IC=3.5A ; VCE=4V
IC=0.5A ; VCE=4V
hFE
DC current gain
20
100
fT
Transition frequency
0.8
MHz
2