SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5427 2N5429
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
80
TYP.
MAX
UNIT
2N5427
2N5429
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=50mA ;IB=0
V
100
VCEsat-1
VCEsat-2
VBE sat-1
VBE sat-2
ICBO
Collector-emitter saturation voltage IC=2A; IB=0.2A
Collector-emitter saturation voltage IC=7A ;IB=0.7A
0.7
1.2
1.2
2.0
0.1
V
V
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
IC=2A; IB=0.2A
V
IC=7A ;IB=0.7A
V
VCB=Rated VCBO; IE=0
mA
VCE= 75V; VBE(off)=-1.5V
TC=150ꢀ
0.1
1.0
2N5427
Collector
cut-off current
ICEX
mA
mA
VCE= 90V; VBE(off)=-1.5V
TC=150ꢀ
0.1
1.0
2N5429
IEBO
hFE-1
hFE-2
hFE-3
fT
Emitter cut-off current
DC current gain
VEB=6V; IC=0
0.1
IC=0.5A ; VCE=2V
IC=2A ; VCE=2V
30
30
20
20
DC current gain
120
DC current gain
IC=5A ; VCE=2V
Transition frequency
IC=0.5A ; VCE=10V;f=10MHz
MHz
2
SAVANTIC [ Savantic, Inc. ]
