SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2N5193 2N5194 2N5195
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
-40
-60
-80
TYP.
MAX
UNIT
2N5193
2N5194
2N5195
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=-0.1A; IB=0
V
VCEsat-1
VCEsat-2
VBE
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
2N5193
IC=-1.5A ;IB=-0.15A
IC=-4A ;IB=-1A
-0.6
-1.2
-1.2
V
V
V
IC=-1.5A ; VCE=-2V
VCE=-40V; IB=0
VCE=-60V; IB=0
ICEO
Collector cut-off current
-1.0
-0.1
mA
mA
2N5194
2N5195
2N5193
2N5194
2N5195
2N5193
2N5194
2N5195
VCE=-80V; IB=0
VCB=-40V; IE=0
VCB=-60V; IE=0
VCB=-80V; IE=0
ICBO
Collector cut-off current
VCE=-40V; VBE(off)=-1.5V
TC=125ꢀ
VCE=-60V; VBE(off)=-1.5V
TC=125ꢀ
VCE=-80V; VBE(off)=-1.5V
TC=125ꢀ
-0.1
-2.0
-0.1
-2.0
-0.1
-2.0
ICEX
IEBO
hFE-1
Collector cut-off current
Emitter cut-off current
DC current gain
mA
mA
VEB=-5V; IC=0
-1.0
100
80
2N5193
25
20
10
2N5194 IC=-1.5A ; VCE=-2V
2N5195
2N5193
hFE-2
DC current gain
2N5194 IC=-4A ; VCE=-2V
2N5195
7
2
fT
Transition frequency
IC=-1A ; VCE=-10V;f=1MHz
MHz
2
SAVANTIC [ Savantic, Inc. ]
