SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N4913 2N4914 2N4915
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
40
TYP.
MAX
UNIT
2N4913
2N4914
2N4915
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=0.2A ;IB=0
60
V
80
VCEsat-1
VCEsat-2
VBE
Collector-emitter saturation voltage IC=2.5A; IB=0.25A
Collector-emitter saturation voltage IC=5A ;IB=1A
1.0
1.5
1.4
1.0
1.0
V
V
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
IC=2.5A ; VCE=2V
V
ICEO
VCE=Rated VCEO; IB=0
VCB=Rated VCBO; IE=0
mA
mA
mA
mA
ICBO
VCE= Rated VCEO; VBE(off)=1.5V
TC=150ꢀ
1.0
2.0
ICEV
IEBO
VEB=5V; IC=0
1.0
hFE-1
hFE-2
fT
IC=2.5A ; VCE=2V
IC=5A ; VCE=2V
25
7
100
DC current gain
Transition frequency
IC=1A ; VCE=10V;f=1.0MHz
4
MHz
2