SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N3232
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
VCE(sat)
VBE(on)
ICEO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=30mA ;IB=0
60
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
IC=5A ;IB=0.5A
IC=3A ; VCE=4V
VCE=40V; IB=0
VCB=80V; IE=0
VEB=7V; IC=0
1.0
1.5
0.7
0.1
0.1
55
V
V
mA
mA
mA
ICBO
IEBO
hFE
DC current gain
IC=5A ; VCE=10V
18
2
SAVANTIC [ Savantic, Inc. ]
