2SB764/2SD863
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
(–0.2) (–0.7)
0.15 0.5
(–)0.85 (–)1.2
V
V
V
V
V
V
Collector-to-Emitter Saturation Voltage
V
I
=(–)500mA, I =(–)50mA
CE(sat)
BE(sat)
C
B
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Votage
V
I
I
I
=(–)500mA, I =(–)50mA
C
C
C
B
V
V
V
=(–)10µA, I =0
(–)60
(–)50
(–)5
(BR)CBO
(BR)CEO
(BR)EBO
E
=(–)1mA, R =∞
BE
I =(–)10µA, I =0
E
C
* : The SB764/2SD863 are classified by 50mA h as follows :
FE
Rank
D
E
F
h
60 to 120
100 to 200 160 to 320
FE
I
-- V
I
-- V
C CE
C
CE
--1000
--800
--600
--400
1000
800
600
400
2SD863
2SB764
--200
0
200
0
--1mA
I =0
1mA
I =0
B
B
0
--2
--4
--6
--8
--10
--12
ITR08345
0
2
4
6
8
10
12
Collector-to-Emitter Voltage, V
– V
Collector-to-Emitter Voltage, V – V
CE
ITR08346
CE
I
-- V
I
-- V
CE
C
CE
C
--1000
--800
--600
--400
1000
800
600
400
2SB764
2SD863
--2mA
--200
0
200
0
I =0
B
--0.8
I =0
B
0.8
0
--0.2
--0.4
--0.6
--1.0
– V
--1.2
ITR08347
0
0.2
0.4
0.6
1.0
– V
1.2
ITR08348
Collector-to-Emitter Voltage, V
CE
Collector-to-Emitter Voltage, V
CE
h
FE
-- I
C
I
-- V
C
BE
1200
1000
800
1000
5
V
=2V
V
=2V
CE
CE
3
2
2SD863
600
100
5
400
3
2
200
0
(For PNP, minus sign
is omitted.)
(For PNP, minus sign is omitted.)
10
0
0.2
0.4
0.6
0.8
1.0
1.2
ITR08349
2
3
5
2
3
5
2
3
5
2
3
1.0
100
1000
C1o0llector Current, I – mA
Base-to-Emitter Voltage, V
– V
BE
ITR08350
C
No.575–2/4
SANYO [ SANYO SEMICON DEVICE ]
