2SB1302
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
=--20V, I =0A
Unit
min
max
--500
Collector Cutoff Current
Emitter Cutoff Current
I
I
V
V
V
V
V
V
nA
nA
CBO
EBO
CB
EB
CE
CE
CE
CB
E
=--4V, I =0A
--500
400*
C
h
h
1
=--2V, I =--500mA
100*
FE
FE
C
DC Current Gain
2
=--2V, I =--4A
60
C
Gain-Bandwidth Product
Output Capacitance
f
=--5V, I =--200mA
C
320
MHz
pF
mV
V
T
Cob
=--10V, f=1MHz
60
--250
--1.0
Collector-to-Emitter Saturation Voltage
Base-to-Emitterr Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
V
V
V
V
V
(sat)
CE
I
C
I
C
I
C
I
C
=--3A, I =--60mA
--500
--1.3
B
(sat)
BE
=--3A, I =--60mA
B
=--10μA, I =0A
--25
--20
--5
V
(BR)CBO
(BR)CEO
(BR)EBO
E
=--1mA, R =∞
BE
V
I =--10μA, I =0A
V
E
C
t
t
t
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
40
200
10
ns
ns
ns
on
Storage Time
stg
f
Fall Time
*: The 2SB1302 is classified by 500mA h as follows:
FE
Rank
R
S
T
h
100 to 200
140 to 280
200 to 400
FE
Package Dimensions
unit : mm (typ)
Switching Time Test Circuit
I
B1
PW=20μs
D.C.≤1%
7007B-004
OUTPUT
I
B2
INPUT
R
B
V
R
R
L
50Ω
+
+
100μF
470μF
V
BE
=5V
V = --10V
CC
I =10I = --10I = --2A
C B1 B2
No.2555-2/4
SANYO [ SANYO SEMICON DEVICE ]
