2SB1134/2SD1667
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Rise Time
V
I
I
I
=(–)3A, I =(–)0.3A
B
(–)0.4
V
V
CE(sat)
C
C
C
V
V
V
=(–)1mA, I =0
E
(–)60
(–)50
(–)6
(BR)CBO
(BR)CEO
(BR)EBO
=(–)1mA, R =∞
V
BE
I =(–)1mA, I =0
V
E
C
t
See specified Test Circuti.
0.1
(0.7)
1.4
µs
µs
µs
µs
on
Storage Time
t
See specified Test Circuit.
stg
Fall Time
t
f
See specified Test Circuit.
0.2
Switching Time Test Circuit
No.2091–2/4
SANYO [ SANYO SEMICON DEVICE ]
