Ordering number : EN2006D
2SA1417 / 2SC3647
SANYO Semiconductors
DATA SHEET
2SA1417/2SC3647
Features
•
•
•
•
PNP / NPN Epitaxial Planar Silicon Transistor
High-Voltage Switching
Applications
Adoption of FBET, MBIT processes
High breakdown voltage and large current capacity
Fast switching speed
Ultrasmall size making it easy to provide high-density small-sized hybrid ICs
( ) : 2SA1417
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
When mounted on ceramic substrate (250mm
×0.8mm)
2
Specifications
Parameter
Collector-to-Base Voltage
Absolute Maximum Ratings
at Ta=25°C
Conditions
Ratings
(-
-)120
(-
-)100
(-
-)6
(--)2
(--)3
500
1.5
150
--55 to +150
Unit
V
V
V
A
A
mW
W
°C
°C
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Package Dimensions
unit : mm (typ)
7007B-004
Top View
4.5
1.6
1.5
Product & Package Information
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
2SA1417S-TD-E
2SA1417T-TD-E
2SC3647S-TD-E
2SC3647T-TD-E
Packing Type: TD
2.5
1.0
4.0
TD
1
0.4
0.5
1.5
3.0
2
3
0.4
Marking
LOT No.
RANK
CC
2SC3647
2
1
3
2SC3647
AC
RANK
0.75
2SA1417
Electrical Connection
2
1 : Base
2 : Collector
3 : Emitter
Bottom View
1
SANYO : PCP
3
2SA1417
http://www.sanyosemi.com/en/network/
90512 TKIM/22006EA MSIM/O3103TN (KT)/71598HA (KT)/3277KI/N255MW, TS No.2006-1/7
LOT No.