3121, 3122, AND 3123
HALL-EFFECT SWITCHES
FOR HIGH-TEMPERATURE
OPERATION
OPERATION
SENSOR LOCATIONS
The output of these devices (pin 3) switches low when the mag-
netic field at the Hall sensor exceeds the operate point threshold (BOP).
At this point, the output voltage is VOUT(SAT). When the magnetic field
is reduced to below the release point threshold (BRP), the device output
goes high. The difference in the magnetic operate and release points is
called the hysteresis (Bhys) of the device. This built-in hysteresis allows
clean switching of the output even in the presence of external mechani-
cal vibration and electrical noise.
(±0.005" [0.13 mm] die placement)
Suffix “LT”
ACTIVE AREA DEPTH
0.0305"
0.089"
0.775 mm
2.26 mm
NOM
0.043"
1.09 mm
APPLICATIONS INFORMATION
A
Hall effect applications information is available in the “Hall-Effect
IC Applications Guide”, which can be found in the latest issue of
Allegro MicroSystems Data Book AMS-702.
1
2
3
Dwg. MH-008-2D
Suffix “U”
ACTIVE AREA DEPTH
0.0165"
0.42 mm
NOM
CHANGE IN OPERATE POINT
0.091"
2.31 mm
20
0.070"
1.78 mm
15
T
= +25°C
A
A
10
BRANDED
SURFACE
1
2
3
5.0
Dwg. MH-002-2C
0
Suffix “UA”
ACTIVE AREA DEPTH
0.0195"
0.082"
2.07 mm
-5.0
0.50 mm
NOM
0
5
10
15
20
25
SUPPLY VOLTAGE IN VOLTS
Dwg. GH-042
0.055"
1.38 mm
A
BRANDED
SURFACE
1
2
3
Dwg. MH-011-2D
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000