2SC5099
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SA1907)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
120
80
6
6
3
60(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Audio and General Purpose
(Ta=25°C)
Ratings
10
max
10
max
80
min
50
min
∗
0.5
max
20
typ
110
typ
V
MHz
16.2
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
∗h
FE
Rank
Conditions
V
CB
=120V
V
EB
=6V
I
C
=50mA
V
CE
=4V, I
C
=2A
I
C
=2A, I
B
=0.2A
V
CE
=12V, I
E
=–0.5A
V
CB
=10V, f=1MHz
External Dimensions
FM100(TO3PF)
0.8
±0.2
15.6
±0.2
5.5
±0.2
3.45
±0.2
5.5
ø3.3
±0.2
1.6
Unit
µ
A
V
9.5
±0.2
µ
A
23.0
±0.3
a
b
pF
1.75
2.15
1.05
+0.2
-0.1
5.45
±0.1
1.5
4.4
5.45
±0.1
1.5
0.65
+0.2
-0.1
3.3
0.8
O(50 to 100), P(70 to 140), Y(90 to 180)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
30
R
L
(Ω)
10
I
C
(A)
3
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.3
I
B2
(A)
–0.3
t
on
(
µ
s)
0.16typ
t
stg
(
µ
s)
2.60typ
t
f
(
µ
s)
0.34typ
3.35
B
C
E
Weight : Approx 6.5g
a. Part No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
0m
A
15
0m
A
10
0m
A
80m
A
V
C E
( sat ) – I
B
Characteristics
(Typical)
Co l l e c t o r - Em i t t e r Sa t u r a ti o n V o lt a ge V
C E(s at)
( V )
3
I
C
– V
B E
Temperature Characteristics
(Typical)
6
( V
CE
=4 V )
6
20
Co l l e c t o r Cu r r e n t I
C
( A )
50 m A
C o l l e c t o r C u r r e n t I
C
( A )
4
2
4
30mA
2
20mA
1
2
I
B
=10mA
I
C
= 6A
4A
2A
0
0
0.5
1. 0
1 .5
0
0
0
0
1
2
3
4
125
˚C (
Cas
e Te
25˚C
mp
(Cas
e Tem
)
p)
–30˚C
(Case
Temp
)
1
B a s e - E m i t t o r Vo l ta g e V
B E
( V )
Co ll e ct o r -Em i t t er Vo l tag e V
C E
(V )
Ba s e C ur r en t I
B
( A)
(V
C E
= 4 V )
300
D C Cu r r en t G a i n h
FE
DC C ur r e nt Ga i n h
FE
200
1 25 ˚ C
( V
C E
= 4 V)
Transient Thermal Resistance
θ
j -a
( ˚C /W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
5
100
2 5˚ C
100
Typ
–3 0 ˚ C
50
1
50
0 .5
0 .3
30
0.02
0. 1
0 .5
1
56
20
0 .0 2
0.1
0.5
1
56
1
10
100
Time t(ms)
1 0 00 2 0 00
Co l l ect o r C u rren t I
C
(A )
C o ll e ct o r Cu r r e nt I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
=1 2 V )
40
20
10
Cu t-o ff F r e q u e n c y f
T
( M H
Z
)
30
C ol lec to r Cu rr en t I
C
(A )
5
Safe Operating Area
(Single Pulse)
60
P c – Ta Derating
10
DC
10
0m
ms
M ax im um P ow e r D i s s i p a ti o n P
C
( W )
1m
s
s
Typ
40
20
1
0.5
Without Heatsink
Natural Cooling
20
10
Without Heatsink
0
–0.02
0.1
– 0. 1
–1
–6
5
10
50
10 0
Emi t t e r C ur ren t I
E
(A )
C ol l ec t or - Em i t te r Vol t ag e V
C E
( V)
3.5
0
0
25
50
75
1 00
12 5
150
A m b i e n t T e m p e r a tu r e T a ( ˚ C )
126
3.0
2
W
ith
In
fin
ite
he
at
si
nk
SANKEN [ SANKEN ELECTRIC ]
