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2SC3179 参数 Datasheet PDF下载

2SC3179图片预览
型号: 2SC3179
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN三重扩散平面晶体管(音频和通用) [Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose)]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 25 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
2SC3179
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SA1262)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC3179
80
60
6
4
1
30(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
2.5
B C E
Application :
Audio and General Purpose
(Ta=25°C)
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=80V
V
EB
=6V
I
C
=25mA
V
CE
=4V, I
C
=1V
I
C
=2A, I
B
=0.2A
V
CE
=12V, I
E
=–0.2A
V
CB
=10V, f=1MHz
100
max
100
max
60
min
40
min
0.6
max
15
typ
60
typ
External Dimensions
MT-25(TO220)
3.0
±0.2
10.2
±0.2
4.8
±0.2
2.0
±0.1
2SC3179
Unit
µ
A
µ
A
V
V
pF
12.0min
16.0
±0.7
8.8
±0.2
a
b
ø3.75
±0.2
4.0max
MHz
1.35
0.65
+0.2
-0.1
2.5
1.4
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
20
R
L
(Ω)
10
I
C
(A)
2
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(mA)
200
I
B2
(mA)
–200
t
on
(
µ
s)
0.2
typ
t
stg
(
µ
s)
1.9
typ
t
f
(
µ
s)
0.29
typ
Weight : Approx 2.6g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
Co l l e c t o r - Em i t t e r Sa t u r a ti o n V o l t a ge V
CE(sa t)
( V )
4
0
10
m
A
80m
A
V
C E
( sat ) – I
B
Characteristics
(Typical)
I
C
– V
BE
Temperature Characteristics
(Typical)
4
(V
CE
= 4V )
I
B
=
60mA
C o l l e c to r C u r r e n t I
C
( A )
40mA
30mA
2
20mA
C o l l e c t or C u r r e n t I
C
( A)
3
1.0
3
2
p)
mp
)
Te
Ca
se
C(
em
se
T
(C
a
12
25˚
I
C
= 1 A
0
0
1
2
3
4
0
0.005 0.01
0.05
0.1
0.5
1
0
0.4
0.6
0. 8
–30
˚C
2A
5˚C
1
10mA
1
(Ca
3A
se
Te
0.5
mp
)
1.0
1.2
C ol l ec t or - Emi tte r V ol ta ge V
C E
(V )
Ba se Cu r r e nt I
B
( A)
Ba s e - E m i t t or V o l t a ge V
B E
( V )
(V
C E
=4 V)
500
D C Cu rr en t Ga i n h
FE
DC Cu r r e n t Ga i n h
FE
200
1 25 ˚ C
100
2 5˚ C
–3 0˚ C
50
( V
C E
= 4 V)
Transient Thermal Resistance
θ
j -a
(˚ C/ W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
5
Typ
100
50
1
20
0.01
0.1
0 .5
1
4
20
0 .0 2
0 .1
0 .5
1
4
0.5
1
10
Time t(ms)
1 00
1 0 00
C ol l e ct or C u rre nt I
C
(A)
C ol l e ct or C u r r e nt I
C
( A)
f
T
– I
E
Characteristics
(Typical)
40
(V
C E
= 1 2 V )
10
Safe Operating Area
(Single Pulse)
30
1m
Pc – T a Derating
5
Cu t-o ff Fre qu en c y f
T
(M H
Z
)
30
Co lle cto r C ur re n t I
C
( A )
D
C
M a xi mu m Po we r D is s i p a t i o n P
C
( W )
10
m
10
0m
s
s
s
W
ith
20
In
fin
ite
he
20
Typ
at
si
nk
1
10
10
0.5
Without Heatsink
Natural Cooling
W i th o u t H e a t s i n k
2
0
–0.005 –0.01
0.2
– 0. 1
– 0.5 –1
–4
3
10
50
1 00
Emi t t e r Cu rren t I
E
(A )
C ol l ec t or - Em i tt e r Vol t ag e V
C E
( V)
0
0
25
50
75
1 00
125
150
A m b i en t T e m p e r a tu r e T a ( ˚ C )
62