S T S 2307A
1.3
1.10
1.07
1.04
V
DS =V G S
ID=-250uA
1.2
I
D
=-250uA
1.1
1.0
0.9
1.00
0.97
0.8
0.7
0.6
0.94
0.91
-50 -25
0
25 50
75 100 125
-50 -25
0
25 50
75 100 125
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 6. B reakdown V oltage V ariation
with T emperature
with T emperature
12
20
10
10
8
6
4
2
0
2
T
J
=25 C
1.2
V
DS =-5V
0
0
0.6
0.8
1.0
1.4
0
3
6
9
12
15
-IDS , Drain-S ource C urrent (A)
-V S D, B ody Diode F orward V oltage (V )
F igure 7. T ransconductance V ariation
with Drain C urrent
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
50
5
V
DS =-10V
=-2.5A
t
4
3
2
i
I
D
10
m
i
L
1
s
0
)
m
N
s
O
1
(
0
R DS
0
m
1
1
1
s
D
C
V
G S =-4.5V
1
0
0.1
S ingle P ulse
T c=25 C
0.03
4
0.1
1
10 20
50
0.5
0
1
1.5
2
2.5
3
3.5
Qg, T otal G ate C harge (nC )
-V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
Operating Area
F igure 9. G ate C harge
4
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
